The fabrication of scintillators in thin-film form has significant technical challenges, ranging from the limitations of deposition machinery to the functional degradation caused by layer fracturing and loss of structural integrity. Furthermore, achieving high-performance results requires extreme raw material purity and stringent control over precursor and activator concentrations during the growth process. Despite these obstacles, the demand for thin-film architectures remains high, demanding the pursuit of novel materials and innovative synthesis strategies to overcome traditional manufacturing constraints.

Our experimental systematics have recognized polycrystalline CCI325 as the optimal material for thin-film scintillation, demonstrating its outstanding performance as a spectroscopic device characterized by the following features:

• high light yield

                40-50 photon/keV for electrons

                20-25 photon/keV for protons

                10-13 photon/keV for alphas

• long-term stability under ambient conditions including

                humidity

                temperature range (4-400 K)

• exceptional sensitivity for heavy ions due to the

                weak quenching effect

                lack of passive surface layer

• broad, blue emitter

• long decay time from deep STE states

• large Stokes shift and transparency under the broad emission peak